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| Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter Vorlaufige Daten / Preliminary Data SFH 4391 Area not flat 0.6 0.4 5.2 4.5 4.1 3.9 2.54 mm spacing 4.0 3.6 0.7 0.4 0.8 0.4 1.8 1.2 Anode (3.5) 29 27 6.3 5.9 o3.1 o2.9 0.6 0.4 fpx06986 Chip position GEX06990 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale * Hohe Pulsleistung sowie hoher Gesamtstrahlungsflu e * Sehr kurze Schaltzeiten (10 ns) * Geringe Vorwartsspannung und Leistungsaufnahme * Sehr hohe Langzeitstabilitat * Gegurtet lieferbar Anwendungen * Schnelle Datenubertragung mit Ubertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) * Analoge und digitale Hi-Fi Audio- und Videosignalubertragung * Batteriebetriebene Gerate (geringe Stromaufnahme) * Anwendungen mit hohen Zuverlassigkeitsanspruchen bzw. erhohten Anforderungen * Alarm- und Sicherungssysteme * IR Freiraumubertragung Features * High pulse power and high radiant flux e * Very short switching times (10 ns) * Low forward voltage and power dissipation * Very high long-time stability * Available on tape and reel Applications * High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia) * Analog and digital Hi-Fi audio and video signal transmission * Low power consumption (battery) equipment * Suitable for professional and high-reliability applications * Alarm and safety equipment * IR free air transmission Semiconductor Group 1 1998-09-08 SFH 4391 Typ Type SFH 4391 Bestellnummer Ordering Code Q62702-P5065 Gehause Package 3 mm-LED-Gehause (T1), klar, Anschlusse im 2,54-mm Raster, Anodenkennzeichnung: kurzer Anschlu 3-mm-LED package (T1), clear, solder tabs 2.54-mm (1/10"), anode marking: short lead Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Sperrschicht - Umgebung Thermal resistance junction - ambient Symbol Symbol Top; Tstg VR IF (DC) IFSM Ptot RthJA Wert Value - 40 ... + 100 3 100 2 200 375 Einheit Unit C V mA A mW K/W Semiconductor Group 2 1998-09-08 SFH 4391 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength of peak emission IF = 100 mA, tP = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tP = 20 ms Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Symbol Symbol peak Wert Value 880 Einheit Unit nm 25 nm A LxB LxW 20 0.09 0.3 x 0.3 10 Grad deg. mm2 mm ns Schaltzeiten, Ie von 10% auf 90% und von tr, tf 90% auf 10%, bei IF = 100 mA, tP = 20 ms, RL = 50 Switching times, Ie from 10% to 90% and from 90% to10%, IF = 100 mA, tP = 20 ms, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 3 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA C0 35 pF VF VF IR 1.5 ( 2.0) 3.0 ( 3.8) 0.01 ( 10) V V A e 25 mW TCI - 0.44 %/K Semiconductor Group 3 1998-09-08 SFH 4391 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant intensity Ie in axial direction at a solid angle of = 0.01 sr Bezeichnung Description Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Lotbedingungen Soldering Conditions Tauch-, Schwall- und Schlepplotung Dip, wave and drag soldering Lotbadtemperatur Maximal zulassige Lotzeit Max. perm. soldering time 10 s Abstand Lotstelle - Gehause Distance between solder joint and case Kolbenlotung (mit 1,5-mm-Kolbenspitze) Iron soldering (with 1.5-mm-bit) Temperatur des Kolbens Maximale zulassige Lotzeit Abstand Lotstelle - Gehause Distance between solder joint and case Symbol Ie typ Werte Values 40 Einheit Unit mW/sr Symbol Symbol TCV TC Wert Value -2 + 0.13 Einheit Unit mV/K nm/K Ie typ 280 mW/sr Temperature of the soldering bath 260 C Temperature Max. permissiof the solder- ble soldering ing iron time 300 C 3s 1.5 mm 1.5 mm Semiconductor Group 4 1998-09-08 SFH 4391 Relative spectral emission Irel = f () 100 % rel 90 80 OHF00366 Radiant intensity e ---------------- = f (I F) - I Single pulse, tp = 20 s e (100 mA) 1 I e 100mA Max. permissible forward current IF = f (TA) 120 OHF00359 e 10 2 OHF00363 F mA 100 10 70 60 50 40 30 20 10 0 700 750 800 850 900 nm 1000 80 R thjA = 375 K/W 10 0 60 40 10 -1 20 10 -2 -2 10 10 -1 10 0 F A 10 1 0 0 20 40 60 80 100 C 120 TA Forward current IF = f (VF) single pulse, tp = 20 s 10 1 OHF00362 Radiation characteristics Irel = f () 40 30 20 10 0 OHF00422 F A 50 1.0 0.8 10 0 60 0.6 0.4 70 10 -1 80 90 0.2 0 10 -2 100 0 0.5 1 1.5 2 2.5 V 3 VF 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Permissible pulse power Duty cycle D = parameter, TA = 25 C 10 1 OHF00361 F A 5 tp D= tp T T D = 0.005 0.01 0.02 0.05 0.1 0.2 0.5 F 10 0 5 10 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp Semiconductor Group 5 1998-09-08 |
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